STD2NB25-1 Просмотр технического описания (PDF) - STMicroelectronics
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STD2NB25-1 Datasheet PDF : 9 Pages
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STD2NB25
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 125 V
ID = 1 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 200 V ID =2 A VGS = 10 V
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 200 V ID = 2 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 2 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 2 A di/dt = 100 A/µs
VDD = 50 V Tj = 150 oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
5
7
Max.
7
10
Unit
ns
ns
10.3 16
nC
3.7
nC
2.3
nC
Min.
Typ.
11
13
18
Max.
15
18
24
Unit
ns
ns
ns
Min.
Typ.
Max.
2
8
Unit
A
A
1.5
V
120
ns
300
nC
5
A
Safe Operating Area
Thermal Impedance
3/9
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