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STD2NB25-1

N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAK PowerMESH™ MOSFET

STMicroelectronics 

®

STD2NB25

N - CHANNEL 250V - 1.7Ω - 2A - IPAK/DPAK

PowerMESH™ MOSFET

TYPE

VDSS

RDS(on)

ID

STD2NB25

250 V

<2Ω

2A

s TYPICAL RDS(on) = 1.7 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

s FOR SMD DPAK VERSION CONTACT

SALES OFFICE

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

3

2

3

1

1

IPAK

TO-251

(Suffix "-1")

DPAK

TO-252

(Suffix "T4")

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

VDGR

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

VGS

ID

ID

IDM(•)

Ptot

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

October 1998

Value

250

250

± 20

2

1.25

8

40

0.32

6

-65 to 150

150

(1) ISD ≤2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Unit

V

V

V

A

A

A

W

W/oC

V/ns

oC

oC

1/9

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