STB70NF02L Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STB70NF02L

N-CHANNEL 20V - 0.006 Ω - 70A D2PAK LOW GATE CHARGE STripFET™II POWER MOSFET

STMicroelectronics 

STB70NF02L

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

1.5

Rthj-amb Thermal Resistance Junction-ambient

Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

Typ

300

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ.

V(BR)DSS Drain-source

Breakdown Voltage

ID = 250 µA VGS = 0

20

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 18V

°C/W

°C/W

°C

Max.

Unit

V

1

µA

10

µA

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 5 V

ID = 35 A

ID = 18 A

Min.

1

Typ. Max.

0.006 0.009

0.011 0.015

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS>ID(on)xRDS(on)max ID=35 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

40

1500

900

200

Max.

Unit

S

pF

pF

pF

2/7

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