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STB70NF02L

N-CHANNEL 20V - 0.006 Ω - 70A D2PAK LOW GATE CHARGE STripFET™II POWER MOSFET

STMicroelectronics 

STB70NF02L

N-CHANNEL 20V - 0.006 Ω - 70A D2PAK

LOW GATE CHARGE STripFET™II POWER MOSFET

PRELIMINARY DATA

TYPE

VDSS

RDS(on)

ID

STB70NF02L

20 V <0.009Ω 70 A

s TYPICAL RDS(on) = 0.016 Ω

s TYPICAL Qg = 36 nC @ 10 V

s OPTIMAL RDS(on) x Qg TRADE-OFF

s CONDUCTION LOSSES REDUCED

s SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power MOSFET is the third

genaration of STMicroelectronis unique "Single Feature

Size™" strip-based process. The resulting transistor

shows the best trade-off between on-resistance and gate

charge. When used as high and low side in buck

regulators, it gives the best performance in terms of both

conduction and switching losses. This is extremely

important for motherboards where fast switching and

high efficiency are of paramount importance.

3

1

D2PAK

TO-263

(Suffix “T4”)

ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM(•)

Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

Value

20

20

± 18

70

50

280

100

0.67

-65 to 175

175

Unit

V

V

V

A

A

A

W

W/°C

°C

°C

March 2002

1/7

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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