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STGW20NB60KD Просмотр технического описания (PDF) - STMicroelectronics
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Компоненты Описание
производитель
STGW20NB60KD
N-CHANNEL 20A - 600V TO-247 SHORT CIRCUIT PROOF PowerMESH™ IGBT
STMicroelectronics
STGW20NB60KD Datasheet PDF : 11 Pages
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STGW20NB60KD
Table 10: Collector-Emitter Diode
Symbol
Parameter
I
f
Forward Current
I
fm
Forward Current pulsed
V
f
Forward On-Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
I
rrm
Reverse Recovery Current
Test Conditions
I
f
= 10 A
I
f
= 10 A, Tj = 125 °C
I
f
= 10 A ,V
R
= 27 V,
Tj =125°C, di/dt = 100 A/
μ
s
(see Figure 20)
Min.
Typ.
1.27
1
80.5
181
4.5
Max. Unit
20
A
80
A
2.0
V
V
ns
nC
A
4/11
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