STGW20NB60KD Просмотр технического описания (PDF) - STMicroelectronics
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STGW20NB60KD Datasheet PDF : 11 Pages
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STGW20NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
gfs
Forward Transconductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
tscw
Short Circuit Withstand Time
Test Conditions
VCE = 25 V, IC= 20 A
VCE = 25V, f = 1 MHz, VGE = 0
VCE = 480 V, IC = 20 A,
VGE = 15V,
(see Figure 19)
Vce = 0.5 BVces , Tj = 125°C
RG = 10 Ω, VGE= 15V
Min.
10
Typ.
8
1560
190
38
85
14.4
51
Max.
115
Unit
S
pF
pF
pF
nC
nC
nC
µs
Table 8: Switching On
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VCC = 480 V, IC = 20 A
39
ns
tr
Current Rise Time
RG= 10Ω, VGE= 15V, Tj= 25°C
35
ns
(see Figure 17)
(di/dt)on Turn-on Current Slope
VCC = 480 V, IC = 20 A
453
Eon (2) Turn-on Switching Losses
RG= 10Ω, VGE= 15V, Tj= 125°C
675
(see Figure 17)
A/µs
µJ
2) Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack
diode, the co-pack diode is used as external diode.
Table 9: Switching Off
Symbol
Parameter
Test Conditions
tr(Voff)
tc
td(off)
Off Voltage Rise Time
Cross-over Time
Turn-off Delay Time
Vcc = 480 V, IC = 20 A,
RGE = 10 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 17)
tf
Current Fall Time
Eoff (3) Turn-off Switching Loss
Ets
Total Switching Loss
tr(Voff)
tc
td(off)
Off Voltage Rise Time
Cross-over Time
Turn-off Delay Time
Vcc = 480 V, IC = 20 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
(see Figure 17)
tf
Current Fall Time
Eoff (3) Turn-off Switching Loss
Ets
Total Switching Loss
(3)Turn-off losses include also the tail of the collector current.
Min.
Typ.
25
160
105
95
0.5
0.9
46
175
130
150
0.70
1.35
Max. Unit
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
3/11
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