STB30NS15 Просмотр технического описания (PDF) - STMicroelectronics

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STB30NS15

N-CHANNEL 150V - 0.075 Ω - 30A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STMicroelectronics 

STB30NS15

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

1.36

Rthj-amb Thermal Resistance Junction-ambient

Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

300

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

150

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

°C/W

°C/W

°C

Max.

Unit

V

1

µA

10

µA

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

ID = 15 A

Min.

2

Typ.

3

0.075

Max.

4

0.1

Unit

V

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 20 V

ID = 15 A

VDS = 25V f = 1 MHz VGS = 0

Min.

Typ.

8

990

175

110

Max.

Unit

S

pF

pF

pF

2/9

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