STGP12NB60H Просмотр технического описания (PDF) - STMicroelectronics

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STGP12NB60H

N-CHANNEL 12A - 600V TO-220 PowerMESH™ IGBT

STMicroelectronics 

®

STGP12NB60H

N-CHANNEL 12A - 600V TO-220

PowerMESH™ IGBT

TYPE

VCES

VCE(sat)

IC

STGP12NB60H

600 V < 2.8 V 12 A

s HIGH INPUT IMPEDANCE

(VOLTAGE DRIVEN)

s LOW ON-VOLTAGE DROP (VCESAT)

s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s VERY HIGH FREQUENCY OPERATION

s OFF LOSSES INCLUDE TAIL CURRENT

DESCRIPTION

Using the latest high voltage technology based

on a patented strip layout, STMicroelectronics

has designed an advanced family of IGBTs, the

PowerMESH™ IGBTs, with outstanding

perfomances. The suffix ”H” identifies a family

optimized to achieve very low switching times for

high frequency applications (<120kHz).

APPLICATIONS

s HIGH FREQUENCY MOTOR CONTROLS

s SMPS AND PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

s UPS

PRELIMINARY DATA

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCES Collector-Emitter Volt age (VGS = 0)

VECR

VGE

IC

IC

Emitter-Collector Voltage

G ate-Emitter Voltage

Collector Current (continuous) at Tc = 25 oC

Collector Current (continuous) at Tc = 100 oC

ICM(•)

Ptot

Collector Current (pulsed)

T otal Dissipation at Tc = 25 oC

Derating Factor

Ts tg Storage T emperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

June 1999

V a lu e

600

20

± 20

24

12

96

100

0 .8

-65 to 150

150

Unit

V

V

V

A

A

A

W

W /o C

oC

oC

1/8

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