STGB10N60L Просмотр технического описания (PDF) - STMicroelectronics

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STGB10N60L

N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT

STMicroelectronics 

STGB10N60L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

td(on)

tr

( di / dt ) o n

Eo n

P ar am et e r

Delay Time

Rise Time

Turn-on Current Slope

Turn-on

Switching Losses

Test Conditions

VCC = 480 V

VGE= 5 V

VCC = 480 V

RG = 1 KΩ

Tj = 125 oC

IC = 8 A

RG = 1 KΩ

IC = 8 A

V GE = 5 V

Min.

Typ.

0.7

1.9

5

2.5

Max.

Unit

µs

µs

A/µs

mJ

SWITCHING OFF

Symbo l

P ar am et e r

Test Conditions

tc

tr(voff)

tf

Eo ff(**)

Cross-O ver Time

VCC = 480 V

Off Volt age Rise Time RGE = 1 KΩ

Fall Time

Tj = 25 oC

Turn-off Switching Loss

IC = 8 A

VGE = 5 V

tc

tr(voff)

tf

Eo ff(**)

Cross-O ver Time

VCC = 480 V

Off Volt age Rise Time RGE = 1 KΩ

Fall Time

Tj = 125 oC

Turn-off Switching Loss

(•) Pulse width limited by safe operating area

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(**)Losses Include Also The Tail (Jedec Standardization)

IC = 8 A

VGE = 5 V

Min.

Typ.

4

2.5

1.5

9.0

6

3.3

2.5

10.8

Max.

Unit

µs

µs

µs

mJ

µs

µs

µs

mJ

Safe Operating Area

Thermal Impedance

3/8

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