STGB10N60L Просмотр технического описания (PDF) - STMicroelectronics

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STGB10N60L

N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT

STMicroelectronics 

®

STGB10N60L

N-CHANNEL 10A - 600V D2PAK

LOGIC LEVEL IGBT

TYPE

V CES

VCE(s a t )

IC

STGB10N60L

600 V < 1.95 V 10 A

s HIGH INPUT IMPEDANCE

(VOLTAGE DRIVEN)

s VERY LOW ON-VOLTAGE DROP (Vcesat)

s LOW THRESHOLD VOLTAGE

(LOGIC LEVEL INPUT)

s HIGH CURRENT CAPABILITY

s OFF LOSSES INCLUDE TAIL CURRENT

s SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX)

OR IN TAPE & REEL (SUFFIX ”T4”)

3

1

D2PAK

TO-263

APPLICATIONS

s ELECTRONIC IGNITION

s LIGHT DIMMER

s STATIC RELAYS

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

VCES Collector-Emitter Volt age (VGS = 0)

VECR

VGE

IC

IC

Reverse Battery Protection

G ate-Emitter Voltage

Collector Current (continuous) at Tc = 25 oC

Collector Current (continuous) at Tc = 100 oC

ICM(•)

Ptot

Collector Current (pulsed)

T otal Dissipation at Tc = 25 oC

Derating Factor

Ts tg Storage T emperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

June 1999

Value

600

25

± 15

25

20

100

125

0. 83

-65 to 175

175

Un it

V

V

V

A

A

A

W

W /o C

oC

oC

1/8

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