STB30NF10 Просмотр технического описания (PDF) - STMicroelectronics

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STB30NF10

N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

STB30NF10 - STP30NF10 - STP30NF10FP

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

Zero gate voltage

drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250µA, VGS =0

100

V

VDS = max ratings

VDS = max ratings,

TC = 125°C

1

µA

10

µA

VGS = ± 20V

±100 nA

VDS = VGS, ID = 250µA

2

3

4

V

VGS = 10V, ID = 15A

0.038 0.045 Ω

Table 4.

Symbol

Dynamic

Parameter

Test conditions

gfs (1)

Forward

transconductance

VDS = 15V, ID = 15A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 50V, ID = 15A

RG = 4.7Ω VGS = 10V

(see Figure 15)

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 80V, ID = 12A,

VGS = 10V

(see Figure 16)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Min. Typ. Max. Unit

10

S

1180

pF

180

pF

80

pF

15

ns

40

ns

45

ns

10

ns

40

55

nC

8

nC

15

nC

4/16

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