STB30NF10 Просмотр технического описания (PDF) - STMicroelectronics

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STB30NF10

N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB30NF10

STP30NF10 - STP30NF10FP

N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP

Low gate charge STripFET™ II Power MOSFET

General features

Type

VDSS

RDS(on)

ID

STB30NF10 100V <0.045Ω

35A

STP30NF10 100V <0.045Ω

35A

STP30NF10FP 100V <0.045Ω

35A

■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Application oriented characterization

Description

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a

remarkable manufacturing reproducibility.

Applications

■ Switching application

3

2

1

TO-220

3

1

D2PAK

3

2

1

TO-220FP

Internal schematic diagram

Order codes

Sales type

STB30NF10T4

STP30NF10

STP30NF10FP

Marking

B30NF10

P30NF10

P30NF10FP

Package

D2PAK

TO-220

TO-220FP

Packaging

Tape & reel

Tube

Tube

June 2006

Rev 2

1/16

www.st.com

16

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