STB40NF10L(2006) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STB40NF10L
(Rev.:2006)

N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB40NF10L

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VDGR

Drain-gate voltage (RGS = 20 kΩ)

VGS

Gate- source voltage

ID

Drain current (continuous) at TC = 25°C

ID

IDM(1)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Ptot

Total dissipation at TC = 25°C

Derating Factor

EAS (2)

Single pulse avalanche energy

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Pulse width limited by safe operating area.

2. Starting Tj = 25 °C, ID = 20A, VDD = 40V

Value

100

100

± 15

40

25

160

150

1

430

-65 to 175

Unit

V

V

V

A

A

A

W

W/°C

mJ

°C

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

TJ

Maximum lead temperature for soldering purpose

1

°C/W

62.5

°C/W

300

°C

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