D20NF10 Просмотр технического описания (PDF) - STMicroelectronics

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D20NF10

N-channel 100V - 0.038Ω - 100A - DPAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STD20NF10

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 20A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 30A, di/dt = 100A/µs,

Reverse recovery charge VDD = 55V, Tj = 150°C

Reverse recovery current (see Figure 16)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Typ.

110

390

7.5

Max. Unit

30

A

120 A

1.3 V

ns

µC

A

5/13

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