NTE2976 Просмотр технического описания (PDF) - NTE Electronics
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NTE2976 Datasheet PDF : 2 Pages
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Forward Transconductance
Static Drain–Source On–State Resistance
Gate Threshold Voltage
Source–Drain Diode Forward Voltage
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
V(BR)DSS ID = 1mA, VGS = 0V
IDSS VDS = 700V, VGS = 0V
IGSS VGS = ±30V, VDS = 0V
gfs ID = 3A, VDS = 10V
RDS(on) ID = 3A, VGS = 10V
VTH ID = 1mA, VDS = 10V
VSD IS = 3A, VGS = 0V
Qg VDD = 400V, VGS = 10V, ID = 6A
Ciss VDS = 10V, VGS = 0V, f = 1MHz
Crss
Output Capacitance
Turn–On Time
Turn–Off Time
Coss
ton
toff
ID = 3A, RL = 50Ω, VGS = 10V
Min Typ Max Unit
700 –
–
V
–
– 250 µA
–
– ±0.1 µA
3
5
–
S
– 1.5 2.0 Ω
2.5 3.0 3.5 V
–
– 1.5 V
– 35 – nC
– 1250 – pF
– 250 – pF
– 530 – pF
– 60 110 ns
– 160 250 ns
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
.122 (3.1)
Dia
.165
(4.2)
.173 (4.4)
Max
.114 (2.9)
Max
GD S
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
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