NTE2386 Просмотр технического описания (PDF) - NTE Electronics

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производитель

NTE2386

MOSFET N–Channel Enhancemen Mode, High Speed Switch

NTE Electronics 

Thermal Resistance:

Parameter

Junction–to–Case

Case–to–Sink

Junction–to–Ambient

Symbol

Test Conditions

Min Typ Max Unit

RthJC

–

– 1.0 °C/W

RthCS Mounting surface flat, smooth, and greased – 0.12 – °C/W

RthJA Typical socket mount

–

– 30 °C/W

Note 1. Repetitive Rating: Pulse Width limited by maximum junction temperature.

Note 2. VDD = 60V, Starting TJ = 25°C, L = 27mH, RG = 25Ω, Peak IC = 6.2A

Note 3. ISD ≤ 6.2A, di/dt = 80A/µs VDD ≤ 3VDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω

Note 4. Pulse width ≤ 300µs: Duty Cycle ≤ 2%.

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

Source

.215 (5.45)

.430

(10.92)

.040 (1.02)

1.187 (30.16)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Gate

.525 (13.35) R Max

Drain/Case

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