NTE2386 Просмотр технического описания (PDF) - NTE Electronics
Номер в каталоге
Компоненты Описание
производитель
NTE2386 Datasheet PDF : 3 Pages
| |||
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Breakdown Voltage
Drain–to–Source
BVDSS VGS = 0V, ID = 250µA
Static Drain–to–Source
On–State Resistance
RDS(on) VGS = 10V, ID = 3.4A, Note 4
On–State Drain Current
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Leakage Current
Gate–to–Source
ID(on)
VGS(HL)
gs
IDSS
IGSS
VDS > ID(on) x RDS(on) Max,
VGS = 10V, Note 4
VDS = VGS, ID = 250µA
VDS = 60V, IDC = 3.4A, Note 4
VDS = Max. Rating VCS = 0V
VDS = 0.8 x Max Rating , VSS = 0V,
TJ = 125°C
VGS = 20V
Reverse Leakage Current
Gate–to–Source
IGSS VGS = –20V
Total Gate Charge
Gate–to–Source Charge
Gate–to–Drain (“Miller”) Charge
Qg
VGS = 10V, ID = 6.2A,
Qgs VDS = 0.8 x Max Rating
Qgd (independent of operating temperature)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Internal Drain Inductance
td(on)
tr
td(off)
tf
LD
VDD = 300V, fD = 6.2A,
RG = 9.1Ω, RD = 47Ω
(independent at operating temperature)
Measured from the drain lead, 6mm
(0.25 In) from packaged to center of
die.
Internal Source Inductance
LS Measured from the source lead, 6mm
(0.25 in) from package to source
bonding pad.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1.0MHz
Min Typ Max Unit
600 –
–
V
– 0.97 1.2 Ω
6.2 –
–
A
2.0 – 4.0 V
4.7 70 – mhos
–
– 250 µA
–
– 1000
–
– 100 nA
–
– –100 nA
– 4.0 80 nC
– 6.5 8.2 nC
– 20 30 nC
– 1.3 20 ns
– 18 27
– 65 83
– 20 20
– 5.0 – nH
– 18 –
– 1300 – pF
– 150 –
– 30 –
Source–Drain Diode Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Forward Turn–On Time
IS
–
– 6.2 A
ISM Note 1
–
– 26 A
VSO TJ = 25°C, IS = 6.2A, VGS = 0V, Note 4
–
– 1.5 V
trr
TJ = 25°C, IF = 6.2A
di/dt = 100A/µs
1.8 3.6 7.9 µC
ton Intrinsic turn–on time is negligible Turn on speed is substantially
controlled by LS + LD
Share Link: 