HMC282 Просмотр технического описания (PDF) - Hittite Microwave

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HMC282

GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz

Hittite Microwave 

v01.0700

MICROWAVE CORPORATION

Absolute Maximum Ratings

Supply Voltage (Vdd)

Supply Current (ldd)

Gate Bias Voltage (Vgg)

DC Gate Current (Igg)

Input Power (RFin) (Vdd = +3V)

Channel Temperature (Tc)

Thermal Resistance ( jc)

(Channel Backside)

Storage Temperature

Operating Temperature

+4 Vdc

200 mA

-2 to +0.4V

4 mA

+13 dBm

175 °C

90 °C/W

-65 to +150 °C

-55 to +85 °C

Outline Drawing

HMC282

GaAs MMIC LOW NOISE

AMPLIFIER, 36 - 40 GHz

1

ALL DIMENSION IN INCHES.

ALL TOLERANCES ARE ± 0.025 (0.001).

DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND.

BOND PADS ARE 0.100 (0.004) SQUARE.

BACKSIDE METALLIZATION: GOLD.

BOND PAD METALLIZATION: GOLD.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at sales@hittite.com

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