HMC279MS8G Просмотр технического описания (PDF) - Hittite Microwave

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производитель

HMC279MS8G

GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz

Hittite Microwave 

v02.0701

HMC279MS8G

GaAs MMIC DRIVER AMPLIFIER

2.5 - 4.2 GHz

8

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (Vdd = + 3.0 Vdc)

Channel Temperature

Continuous Pdiss (T = 85 °C)

(derate 20 mW/°C above 85 °C)

Thermal Resistance

(channel to ground paddle)

Storage Temperature

Operating Temperature

+8.0 Vdc

-10 dBm

150 °C

1.3 W

50 °C/W

-65 to +150 °C

-40 to +85 °C

%,%#42/34!4)#3%.3)4)6%$%6)#%

/"3%26%(!.$,).'02%#!54)/.3

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

8-5

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