CP312(2004) Просмотр технического описания (PDF) - Central Semiconductor

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производитель

CP312
(Rev.:2004)

Power Transistor NPN - Amp/Switch Transistor Chip

Central Semiconductor 

PROCESS CP312

Power Transistor

NPN - Amp/Switch Transistor Chip

CentralTM

Semiconductor Corp.

PROCESS DETAILS

Process

Die Size

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

GEOMETRY

E

EPITAXIAL PLANAR

70 x 70 MILS

9.0 MILS

11.4 x 18 MILS

13.7 x 23.6 MILS

Al - 30,000Å

Ti / Ni / Ag 11,300Å

GROSS DIE PER 4 INCH WAFER

2,200

PRINCIPAL DEVICE TYPES

CZT3120

B

BACKSIDE COLLECTOR

R1

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R3 (26-March 2004)

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