2N7000 Просмотр технического описания (PDF) - Weitron Technology

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Компоненты Описание

производитель

2N7000

Small Signal MOSFET N-Channel

Weitron Technology 

2N7000

2.0

1.8 TA = 25 C

1.6

1.4

VGS = 10 V

9V

1.2

8V

1.0

7V

0.8

0.6

6V

0.4

5V

0.2

4V

3V

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

VDS , DRAIN SOURCE VOLTAGE (VOLTS)

FIG. 1 Ohmic Region

1.0

VDS = 10 V

0.8

0.6

0.4

0.2

- 55 C

25 C

125 C

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

VGS , GATE SOURCE VOLTAGE (VOLTS)

FIG.2 Transfer Characteristics

2.4

2.2

2.0 VGS = 10 V

ID = 200 mA

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

- 60

- 20

+ 20

+ 60

T , TEMPERATURE ( C)

+ 100

+ 140

FIG.3 Temperature versus Static

Drain-Source On-Resistance

1.2

1.05

1.1

1.10

1.0

0.95

0.9

0.85

0.8

0.75

0.7

- 60

VDS = VGS

ID = 1.0 mA

- 20

+ 20

+ 60

+ 100

+ 140

T , TEMPERATURE ( C)

FIG.4 Temperature versus Gate

Threshold Voltage

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