2N7000 Просмотр технического описания (PDF) - Weitron Technology
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2N7000 Datasheet PDF : 4 Pages
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2N7000
Electrical Characteristics
Characteristic
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=10 uA
Gate-Threshold Voltage
VDS=VGS , ID=1.0 mA
Gate-body Leakage
VDS=0V, VGS=15V
Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
VDS=48V, VGS=0V, Tj=125 C
On-State Drain Current (2)
VGS=4.5V, VDS=10V
Drain-Source On-Resistance (2)
VGS=10V, ID=500mA
VGS=4.5V, ID=75mA
Forward Transconductance (2)
VDS=10V, ID=200mA
Drain-Source On-Voltage
VGS=10V, ID=500mA
VGS=10V, ID=75mA
(TA=25 C Unless otherwise noted)
Symbol
Min
V(BR)DSS
60
VGS (th)
0.8
IGSS
-
IDSS
-
-
ID (on)
75
rDS (on)
-
-
gfs
100
VSD(on)
-
-
Dynamic(1)
Input Capacitance
VDS=25V, VGS=0V, f=1MHZ
Output Capacitance
VDS=25V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1MHZ
Ciss
-
Coss
-
Crss
-
Switching (1) (3)
Turn-On Time
VDD=15V, RL=30Ω,ID=500mA
VGEN=10V, RG=25 Ω
Turn-Off Time
VDD=15V, RL=30Ω, ID=500mA
VGEN=10V, RG=25Ω
td(on)
-
td(off )
-
Note: 1. For Design Aid Only not Subject to Production Testing.
2. Pulse Test : PW<_ 300µs, Duty Cycle <_ 2%
3. Switching Time is Essentially Independent of Operating Temperature .
WEITRON
http://www.weitron.com.tw
Max
-
3.0
-10
1.0
1.0
-
5.0
6.0
-
2.5
0.45
Unit
V
V
nA
uA
mA
mA
Ω
us
V
60
25
PF
5.0
10
nS
10
nS
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