2N7002 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

2N7002

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2N7002

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Maximum Drain Current - Continuous

Maximum Drain Current - Pulsed

Gate-Source Voltage - Continuous

Maximum Power Dissipation

Storage Temperature Range

符号

Symbol

VDSS

VDGR

ID

IDM

VGSS

PD

Tstg

DATA SHEET

数值

Rating

60

60

250

800

±20

350

-55～150

单位

Unit

V

V

mA

mA

V

mW

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Drain–Source Breakdown Voltage

符号

Symbol

V(BR)DSS

Zero Gate Voltage Drain Current

IDSS

Zero Gate Voltage Drain Current

IDSS

Gate - Body Leakage

IGSS

Static Drain-Source On-Resistance RDS(on)(1)

RDS(on)(2)

Forward Transconductance

gFS

Drain-Source Diode Forward

Voltage

VSD

Gate Threshold Voltage

VGS(th)

On-State Drain Current

ID(on)

Drain-Source On-Voltage

VDS(on)(1)

VDS(on)(2)

Turn-On Time

Turn-Off Time

td(on)

td(off)

测试条件

Test Conditions

VGS=0

VGS=0

Tj=25℃

VGS=0

Tj=125℃

ID=10μA

VDS=60V

VDS=60V

VGS=±20V VDS=0V

VGS=10V ID=0.5A

VGS=5V

ID=0.05A

VDS=10V ID=0.2A

VGS=0V

IS=250mA

VDS=VGS

ID=250μA

VDS≥2.0VDS(on)

VGS=10V

VGS=10V ID=500mA

VGS=5.0V

VDD=25V

ID=500mA

RL=25Ω

ID=50mA

RG=25Ω

Vgen=10V

最小值 典型值 最大值 单位

Min Typ Max Unit

60

V

1.0 μA

500 μA

±10 nA

5

Ω

5.5 Ω

80

mS

1.5 V

1.0

2.5 V

500

mA

2.5 V

0.27

5

V

20 ns

40 ns

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