2N7002 Просмотр технического описания (PDF) - Yea Shin Technology Co., Ltd

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производитель

2N7002

Small Signal MOSFET 115 mAmps, 60 Volts

Yea Shin Technology Co., Ltd 

DATA SHEET

SEMICONDUCTOR

Small Signal MOSFET

115 mAmps, 60 Volts

N–Channel SOT–23

• Pb−Free Package is Available.: Halogen Free

• AEC-Q101 Pass

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Drain–Gate Voltage (RGS = 1.0 MΩ)

Drain Current

– Continuous TC = 25°C (Note 1.)

– Continuous TC = 100°C (Note 1.)

– Pulsed (Note 2.)

Gate–Source Voltage

– Continuous

– Non–repetitive (tp ≤ 50 µs)

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR–5 Board

(Note 3.) TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate,(Note 4.) TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

Symbol

VDSS

VDGR

ID

ID

IDM

Value

60

60

±115

±75

±800

Unit

Vdc

Vdc

mAdc

VGS

VGSM

±20

Vdc

±40

Vpk

Symbol

PD

Max

225

1.8

Unit

mW

mW/°C

RθJA

PD

RθJA

TJ, Tstg

556

300

2.4

417

–ā55 to

+150

°C/W

mW

mW/°C

°C/W

°C

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

3. FR–5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

ORDERING INFORMATION

Device

2N7002

Marking

702

' M inimum Q t' y

3000/TR

2N7002

H

Drain

3

702

W

1

2

Gate

Source

702 = Device Code

W

= Work Week

SOT– 23 (TO–236AB)

115 mAMPS

60 VOLTS

R DS(on) = 7.5 W

N - Channel

3

1

2

MARKING DIAGRAM

& PIN ASSIGNMENT

http://www.yeashin.com

1

REV.02 20110725

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