UPA861TD Просмотр технического описания (PDF) - NEC => Renesas Technology

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UPA861TD

NEC's NPN SILICON RF TWIN TRANSISTOR

NEC => Renesas Technology 

UPA861TD

ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS RATINGS

Q1 Q2

VCBO Collector to Base Voltage

V

5

9

VCEO Collector to Emitter Voltage V

3

3

VEBO Emitter to Base Voltage

V

2 1.5

IC

Collector Current

mA

30 35

PT

Total Power Dissipation1

mW 90 105

195 Total

TJ

Junction Temperature

°C

150 150

TSTG Storage Temperature

°C -65 to +150

Note: 1. Operation in excess of any one of these parameters may

result in permanent damage.

2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB

ORDERING INFORMATION

PART NUMBER

UPA861TD-T3

QUANTITY

10K Pcs./Reel

PACKAGING

Tape & Reel

TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

300

Mounted on Glass Epoxy PCB

(1.08 cm2 x 1.0mm (t))

250

2 Elements in total

200

195

150

105 Q2

100

90

Q1

50

0

25 50 75 100 125 150

Ambient Temperature, TA (ºC)

Q1

REVERSE TRANSFER CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

0.5

f = 1 MHz

0.4

0.3

0.2

0.1

0

1

2

3

4

5

Collector to Base Voltage, VCB (V)

Q2

REVERSE TRANSFER CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

0.5

f = 1 MHz

0.4

0.3

0.2

0.1

0

2

4

6

8

10

Collector to Base Voltage, VCB (V)

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