NE3515S02-A Просмотр технического описания (PDF) - California Eastern Laboratories.

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NE3515S02-A

HETERO JUNCTION FIELD EFFECT TRANSISTOR

California Eastern Laboratories. 

NE3515S02

RECOMMENDED OPERATING CONDITIONS (TA = +25C)

Parameter

Drain to Source Voltage

Drain Current

Input Power

Symbol

VDS

ID

Pin

MIN.

1

5



TYP.

2

10



MAX.

3

25

0

Unit

V

mA

dBm

ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)

Parameter

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cutoff Voltage

Transconductance

Noise Figure

Associated Gain

Gain 1 dB Compression

Output Power

Symbol

Test Conditions

IGSO VGS = 3 V

IDSS VDS = 2 V, VGS = 0 V

VGS (off) VDS = 2 V, ID = 100 A

gm VDS = 2 V, ID = 10 mA

NF VDS = 2 V, ID = 10 mA, f = 12 GHz

Ga

PO (1 dB) VDS = 3 V, ID = 25 mA set (Non-RF),

f = 12 GHz

MIN.



32

0.2

45



11



TYP.

0.5

60

0.8

70

0.3

12.5

+14

MAX.

10

88

1.4



0.5





Unit

A

mA

V

mS

dB

dB

dBm

2

Data Sheet PG10708EJ01V0DS

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