A92 Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

A92

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

PNP Silicon Epitaxial Planar Transistor

A92

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0

-300

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1.0mA,IB=0

-300

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100μA,IC=0

-5

V

Collector cut-off current

Emitter cut-off current

ICBO

VCB=-200V,IB=0

IEBO

VEB=-3V,IC=0

-0.25 μA

-0.1 μA

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

VCE=-10V,IC=-1mA

VCE=-10V,IC=-10mA

VCE=-10V,IC=-30mA

IC=-20mA, IB=-2mA

60

100 300

60

-0.5 V

Base-emitter saturation voltage

Transition frequency

VBE(sat)

fT

IC=-20mA, IB=-2mA

VCE=-20V, IC=-10mA

f=100MHz

-0.9 V

50

MHz

Collector output capacitance

Cob

VCB=-20V,IE=0,f=1MHz

6

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

E023

Rev.A

www.gmicroelec.com

2

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