A92 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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A92 Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A92 TRANSISTOR（ PNP ）
FEATURES
TO— 92
Power dissipation
PCM : 0.625W（Tamb=25℃）
Collector current
ICM: -0.5 A
Collector-base voltage
V(BR)CBO : -300V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless
1.EMITTER
2.BASE
3.COLLECTOR
otherwise
123
specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100μA，IE=0
-300
V
Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA， IB=0
-300
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA， IC=0
-5
Collector cut-off current
ICBO
VCB= -200 V IE=0
V
-0.25 μA
Emitter cut-off current
IEBO
VEB= -5 V， IC=0
-0.1 μA
hFE（1）
VCE= -10 V, IC=- 1 mA
60
DC current gain
hFE（2）
VCE= -10V, IC = -10 mA
80
250
hFE（3）
VCE= -10 V, IC= -80 mA
60
Collector-emitter saturation voltage
VCE(sat)
IC= -20 mA, IB= -2 mA
-0.2 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC= -20 mA, IB= -2 mA
VCE= -20 V, IC= -10 mA
f = 30MHz
50
-0.9 V
MHz
CLASSIFICATION OF hFE(2)
Rank
A
Range
80-100
B1
100-150
B2
150-200
C
200-250
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