BC238 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BC238 Datasheet PDF : 2 Pages
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20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
BC237/238/239
Switching and Amplifier Applications
• Low Noise: BC239
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN Epitaxial Silicon Transistor
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings T3=25°C unless otherwise noted
Symbol
VCES
VCEO
VEBO
lc
PC
Tj
TSTG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
: BC237
: BC238/239
: BC237
: BC238/239
: BC237
: BC238/239
Value
50
30
45
25
6
5
100
500
150
-55- 150
Units
V
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics T,=25"C unless otherwise noted
Symbol
BVCEO
BVEBO
ICES
HFE
VCE (sat)
Parameter
Collector-Emitter Breakdown Voltage
: BC237
: BC238/239
Emitter Base Breakdown Voltage
: BC237
: BC238/239
Collector Cut-off Current
: BC237
: BC238/239
DC Current Gain
Collector-Emitter Saturation Voltage
VBE(sat) Collector-Base Saturation Voltage
VBE (°n)
ff
Base-Emitter On Voltage
Current Gain Bandwidth Product
C0b
Output Capacitance
cib
Input Base Capacitance
NF
Noise Figure
: BC237/238
: BC239
: BC239
Test Condition
lc=2mA, IB=0
IE=VA, lc=0
Min.
Typ.
45
25
6
5
Max. Units
V
V
V
V
VCE=50V, VBE=0
VCE=30V, VBE=0
0.2
15
nA
0.2
15
nA
VCE=5V, lc=2rr,A
120
800
lc=10mA, !B=0.5mA
lc=100mA, !B=5mA
0.07
0.2
V
0.2
0.6
V
lc=10mA, !B=0.5mA
lc=100mA, !B=5mA
0.73
0.83
V
0.87
1.05
V
VCE=5V, lc=2mA
0.55
0.62
0.7
V
VCE=3V, lc=0.5mA, f=100MHz
85
Vce=5V, lc=10mA, f=100MHz
150
250
MHz
MHz
VCB=10V, IE=0, f=1MHz
3.5
6
pF
VEB=0.5V, lc=0, f=1MHz
8
PF
VCE=5V, lc=0.2rnA,
f=1 KHz RG=2KQ
VCE=5V, lc=0.2mA
RG=2KiJ, t=30-15KHz
2
10
dB
4
dB
4
dB
hFE Classification
Classification
"RE
A
120-220
B
180-460
C
380 - 800
Quality Semi-Conductors
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