MMIX1B15N300C Просмотр технического описания (PDF) - IXYS CORPORATION
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Компоненты Описание
производитель
MMIX1B15N300C
IXYS CORPORATION
MMIX1B15N300C Datasheet PDF : 7 Pages
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MMIX1B15N300C
Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC
1000
VCE(sat) Limit
100
25µs
10
100µs
1
0.1
0.01
1
TJ = 150ºC
TC = 25ºC
Single Pulse
10
100
VCE - Volts
1ms
10ms
DC
100ms
1,000
10,000
Fig. 15. Inductive Switching Energy Loss vs.
Gate Resistance
8
32
7
Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
28
VCE = 1500V
6
24
5
I C = 30A
20
4
16
3
12
2
I C = 15A
8
1
4
10
15
20
25
30
35
40
45
50
RG - Ohms
Fig. 17. Inductive Switching Energy Loss vs.
Junction Temperature
6
28
Eoff
Eon - - - -
5
RG = 10Ω , VGE = 15V
24
VCE = 1500V
4
20
3
I C = 30A
16
2
12
I C = 15A
1
8
0
4
25
35
45
55
65
75
85
95 105 115 125
TJ - Degrees Centigrade
Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC
1000
VCE(sat) Limit
100
10
25µs
100µs
1
1ms
0.1
0.01
1
TJ = 150ºC
TC = 75ºC
Single Pulse
10
100
VCE - Volts
10ms
DC
1,000
100ms
10,000
Fig. 16. Inductive Switching Energy Loss vs.
Collector Current
5
25
Eoff
Eon - - - -
4
TJ = 125ºC , VGE = 15V
20
VCE = 1500V
3
TJ = 125ºC
15
2
10
TJ = 25ºC
1
5
0
0
14
16
18
20
22
24
26
28
30
IC - Amperes
Fig. 18. Inductive Turn-off Switching Times vs.
Gate Resistance
190
2000
tfi
t d(off) - - - -
180
TJ = 125ºC, VGE = 15V
VCE = 1500V
1800
1600
1400
170
1200
160
I C = 15A I C = 30A
1000
800
600
150
400
200
140
0
10
15
20
25
30
35
40
45
50
RG - Ohms
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