CHM4269JPT Просмотр технического описания (PDF) - CHENMKO CO., LTD.

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CHM4269JPT

SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor

CHENMKO CO., LTD. 

ELECTRICAL CHARACTERISTIC ( CHM4269JPT )

N-Channel Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

I GSSF

I GSSR

Gate-Body Leakage

Gate-Body Leakage

VGS = 0 V, ID = 250 µA

VDS = 40 V, VGS = 0 V

VGS = 20V,VDS = 0 V

VGS = -20V, VDS = 0 V

40

V

1

µA

+100 nA

-100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage

RDS(ON) Static Drain-Source On-Resistance

g FS

Forward Transconductance

VDS = VGS, ID = 250 µA

VGS=10V, ID=6A

VGS=4.5V, ID=5A

VDS =5V, ID = 6A

Dynamic Characteristics

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VDS = 20V, VGS = 0V,

f = 1.0 MHz

1

3

V

32

mΩ

46

3

S

1050

155

pF

95

SWITCHING CHARACTERISTICS (Note 4)

Qg Total Gate Charge

Qgs Gate-Source Charge

Q gd Gate-Drain Charge

t on

Turn-On Time

tr

Rise Time

t off

Turn-Off Time

tf

Fall Time

VDS=20V, ID=6A

VGS=10V

VDD= 20V

ID = 6A, VGS= 10 V

RGEN= 3 Ω

20.5 27

3.5

nC

4.0

14 30

10 20

nS

17 35

18 35

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Drain-Source Diode Forward Current (Note 1)

V SD

Drain-Source Diode Forward Voltage IS = 1.0A, VGS= 0 V (Note 2)

1.0 A

1.0 V

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