DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

1SS181 Просмотр технического описания (PDF) - Bytes

Номер в каталоге
Компоненты Описание
производитель
1SS181 Datasheet PDF : 3 Pages
1 2 3
1SS181
Silicon Epitaxial Planar Switching Diode
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Maximum Peak Forward Current
Non-repetitive Peak Forward Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 30 V
at VR = 80 V
Total Capacitance
at VR = 0 , f = 1 MHz
Reverse Recovery Time
at IF = 10 mA
o
3
12
Marking Code: A1
SOT-23 Plastic Package
Symbol
Value
Unit
VRM
VR
IF(AV)
IFM
IFSM
Ptot
Tj
Tstg
85
80
100
300
2
350
150
- 55 to + 150
V
V
mA
mA
A
mW
OC
OC
Symbol
Max.
Unit
VF
1.2
V
IR
0.1
µA
0.5
CT
4
pF
trr
4
ns
http://www.bytesonic.com
Version 1.0
2017/11/15

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]