SD103AX Просмотр технического описания (PDF) - Shanghai Leiditech Electronic Technology Co., Ltd

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SD103AX

Low Forward Voltage Drop

Shanghai Leiditech Electronic Technology Co., Ltd 

SD103AX

FEATURES

 Low Forward Voltage Drop

 Guard Ring Construction for Transient Protection

 Low Reverse Recovery Time

 Low Reverse Capacitance

SOD-523

___

MARKING: S4

S4

S4

The marking bar indicates the cathode

Solid dot = Green molding compound device,if none, the normal device.

MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )

Symbol

Parameter

VRRM

Peak Repetitive Reverse Voltage

VRWM

Working Peak Reverse Voltage

VR

DC Blocking Voltage

VR(RMS)

RMS Reverse Voltage

IFM

Forward Continuous Current

IFSM

Non-Repetitive Peak Forward Surge Current@t=8.3ms

PD

Power Dissipation

RΘJA

Thermal Resistance From Junction To Ambient

Tj

Junction Temperature

Tstg

Storage Temperature

Value

Unit

40

V

28

200

2

150

667

125

-55~+150

V

mA

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter

Reverse voltage

Reverse current

Forward voltage

Total capacitance

Reverse recovery time

Symbol

V(BR)

IR

VF

Ctot

trr

Test conditions

IR=100μA

VR=30V

VR=20V

VR=10V

IF=1mA

IF=5mA

IF=20mA

IF=200mA

VR=0V,f=1MHz

IF= IR=200mA, Irr=0.1×IR, RL=100Ω

Min Typ Max Unit

40

V

5

2

μA

1

0.27

0.32

V

0.37

0.6

50

pF

10

ns

Rev : 01.06.2015

1/5

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