BAS16M3T5G(2011) Просмотр технического описания (PDF) - ON Semiconductor
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BAS16M3T5G Datasheet PDF : 4 Pages
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BAS16M3T5G
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
75
Vdc
Peak Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
PD
260
mW
2.0
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA
490
°C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
PD
580
mW
4.6
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
215
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
°C
+150
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
http://onsemi.com
3
CATHODE
1
ANODE
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
VM
2
1
STYLE 2
V
= Specific Device Code
M
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS16M3T5G
SOT−723
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
August, 2011 − Rev. 2
Publication Order Number:
BAS16M3/D
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