1SS193 Просмотр технического описания (PDF) - Unspecified
Номер в каталоге
Компоненты Описание
производитель
1SS193 Datasheet PDF : 3 Pages
| |||
Features
Low Forward Voltage
Fast Recovery Time
1SS193
Silicon Epitaxial Planar Switching Diode
SOT-23
3
1
2
1. Anode 2.N.C 3.Cathode
Marking Code：5D
3
12
Absolute Maximum Ratings (Ta=25℃ )
Parameter
Maximum Repetitive Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
DC Forward Current
Symbol
VRRM
VR
IF(AV)
IFM
Value
85
80
100
300
Unit
V
V
mA
mA
Non-repetitive Peak Forward Surge Current
at t = 10 ms
IFSM
2
A
Total Device Dissipation
Operating Junction Temperature
Storage Temperature Range
Ptot
350
mW
TJ
150
℃
TSTG
- 55 to + 150
℃
Characteristics (Ta=25℃ )
Parameter
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 100 mA
Reverse Current
at VR = 20 V
at VR = 75 V
Reverse Recovery Time
at IF = 10 mA, VR = 6 V, IRR = 1 mA, RL = 100 Ω
Total Capacitance
at VR = 0 V, f = 1 MHz
www.pingjingsemi.com
Revision：1.0 Apr-2019
Symbol
VF
IR
trr
CT
Min.
-
-
-
-
-
-
-
Typ.
0.6
0.72
0.9
-
-
-
-
Max.
-
-
1.2
0.1
0.5
4
4
Unit
V
µA
ns
pF
1/3
Share Link: 