BAV70S Просмотр технического описания (PDF) - TY Semiconductor

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производитель

BAV70S

High-Speed Double Diode Array

TY Semiconductor 

Product specification

BAV70S

Electrical Characteristics Ta = 25

Parameter

Symbol

forward voltage

VF

reverse current

IR

diode capacitance

Cd

reverse recovery time

trr

forward recovery voltage

Vfr

Conditions

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

VR = 25 V

VR = 75 V

VR = 25 V; Tj = 150

VR = 75 V; Tj = 150

VR = 0; f = 1 MHz;

when switched from IF = 10 mA to IR = 10 mA;

RL = 100 ; measured at IR = 1 mA;

when switched from IF = 10 mA; tr = 20 ns

Max

Unit

200

260

mV

340

420

30

nA

2.5

A

60

A

100

A

1.5

pF

4

ns

1.75

V

Marking

Marking

A4t

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