CSC2335 Просмотр технического описания (PDF) - Continental Device India Limited
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CSC2335 Datasheet PDF : 3 Pages
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CSC2335
Collector current (Pulse value) (1)
Base current (DC)
Total power dissipation up to TC = 25°C
Total power dissipation up to TA = 25°C
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
From junction to case
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 400V
RBE = 51Ω; VCE = 400V; TA = 125°C
VBE(off) = 1.5V; VCE = 400V
VBE(off) = 1.5V; VCE = 400V; TA = 125°C
Emitter cut-off current
IC = 0; VEB = 5V
Breakdown voltages
IC = 3 A; IB1 = 0.6A; L = 1mH
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 3 A; IB = 0.6 A
D.C. current gain
IC = 0.1A; VCE = 5V
IC
IB
Ptot
Ptot
Tj
Tstg
Rth j–c
ICBO
ICER
ICEX
ICEX
IEBO
VCEO(sus)*
VCBO
VEBO
VCEsat*
VBEsat*
hFE*
IC = 1A; VCE = 5V**
hFE*
IC = 3A; VCE = 5V
hFE*
Switching time
IC = 3A; RL = 50Ω
IB1 = –IB2 = 0.6A; VCC = 150V
Turn on time
ton
Storage time
ts
Fall time
tf
* Pulse test: PW ≤ 350 µs; duty cycle ≤ 2% pulsed.
(1) PW ≤ 300 µs; duty cycle ≤ 10%.
** hFE classification: R: 20-40 O: 30-60 Y: 40-80
max.
15 A
max. 3.5 A
max.
40 W
max. 1.5 W
max. 150 ºC
–65 to +150 ºC
3.125 °C/W
max.
max.
max.
max.
max.
min.
min.
min.
max.
max.
min.
max.
min.
max.
min.
10 µA
1.0 mA
10 µA
1.0 mA
10 µA
400 V
500 V
7.0 V
1.0 V
1.2 V
20
80
20
80
10
max.
max.
max.
1.0 µs
2.5 µs
1.0 µs
Continental Device India Limited
Data Sheet
Page 2 of 3
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