BUX11 Просмотр технического описания (PDF) - TT Electronics.
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BUX11 Datasheet PDF : 3 Pages
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SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUX11
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
ICEO
Collector Cut-Off Current
VCE = 160V
IB = 0
ICEX
Collector Cut-Off Current
VCE = 250V
TC = 125°C
VBE = -1.5V
IEBO
V(BR)CEO(1)
V(BR)EBO
VCE(sat)(1)
VBE(sat)(1)
hFE(1)
Emitter Cut-Off Current
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
VEB = 5V
IC = 10mA
IE = 1.0mA
IC = 6A
IC = 12A
IC = 12A
IC = 6A
IC = 12A
IC = 0
IB = 0.6A
IB = 1.5A
IB = 1.5A
VCE = 2V
VCE = 4V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
IC = 1.0A
VCE = 15V
f = 10MHz
IC = 12A
VCC = 150V
IB1 = 1.5A
IC = 12A
VCC = 150V
IB1 = -IB2 = 1.5A
Min. Typ Max. Units
1.5
1.5
mA
6
1.0
200
7
0.6
V
1.5
1.5
20
60
10
8
MHz
1.0
µs
1.8
0.4
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8171
Website: http://www.semelab-tt.com
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