BUX11(2012) Просмотр технического описания (PDF) - Comset Semiconductors
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BUX11 Datasheet PDF : 3 Pages
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NPN BUX11
HIGH CURRENT, HIGH SPEED , HIGH
POWER TRANSISTOR
The BUX11 is silicon multiepitaxial planar NPN transistors in Jedec TO-3.
They are intended for use in switching and linear appications in military and industrial
equipments.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
Pt
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
IE = 0
IC = 0
VBE = -1.5V
tp = 10ms
@ TC = 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
Thermal Resistance, Junction to Case
Value
200
250
7.0
250
20
25
4
150
200
-65 to +200
Unit
V
V
V
V
A
A
A
W
°C
°C
Value
1.17
Unit
°C/W
COMSET SEMICONDUCTORS
1/3
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