BUX39(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

BUX39
(Rev.:2012)

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR

Comset Semiconductors 

NPN BUX39

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

VCEO(SUS)

VEB0

ICEO

Collector-Emitter Sustaining

Voltage (*)

Emitter-Base Voltage

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

hFE

VCE(SAT)

VBE(SAT)

IS/B

fT

Emitter Cutoff Current

DC Current Gain (*)

Collector-Emitter saturation

Voltage (*)

Base-Emitter saturation

Voltage (*)

Second breakdown collector

current

Transition frequency

ton

Turn-on time

ts

Storage time

tf

File time

Test Condition(s) Min Typ Max Unit

IC=200 mA

IC=0A , IE=50 mA

VCE=70 V , IB=0A

VCE= VCEX , VBE= -1.5V

VCE= VCEX , VBE= -1.5V

Tcase = 125°C

VEB=5.0 V, IC=0

IC=12 A , VCE=4.0 V

IC=20 A , VCE=4.0 V

IC=12 A , IB=1.2 A

IC=20 A , IB=2.5 A

IC=20 A , IB=2.5 A

VCE=30 V , ts = 1s

VCE=135 V , ts = 1s

VCE=15 V , IC=1 A

f=4 MHz

IC=8 A , IB=1 A

VCC=150 V

IC=8 A , VCC=150 V

IB1 = -IB2 =1 A

90 -

-

V

7

-

-

V

-

-

1 mA

-

-

1

-

-

5 mA

-

-

1 mA

15

8

-

-

45

-

-

- 0.7 1.2

- 1.25 1.6 V

- 2.1 2.5

4

1

-

-

-

-

A

8

-

- MHz

- 0.8 1.2

- 0.55 1 µs

- .15 0.25

(*) Pulse Duration = 300 µs, Duty Cycle <= 2%

26/10/2012

COMSET SEMICONDUCTORS

3/3

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