BUX39 Просмотр технического описания (PDF) - SavantIC Semiconductor
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BUX39 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX39
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH
V(BR)EBO Emitter-base breakdown votage
IE=50mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=12 A;IB=1.2 A
VCEsat-2 Collector-emitter saturation voltage IC=20 A;IB=2.5 A
VBEsat
ICEX
ICEO
Emitter-base saturation voltage
Collector cut-off current
Collector cut-off current
IC=20 A;IB=2.5 A
VCE=120V; VBE=-1.5V
TC=125
VCE=70V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=12A ; VCE=4V
hFE-2
DC current gain
IC=20A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=15V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=20A ;IB1=-IB2=-2.5A
VCC=30V
MIN TYP. MAX UNIT
90
V
7
V
0.7
1.2
V
1.25 1.6
V
2.1
2.5
V
1.0
5.0
mA
1.0 mA
1.0 mA
15
45
8
8
MHz
0.80 1.5
µs
0.55 1.0
µs
0.15 0.3
µs
2
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