TIP42C-O-C-N-B Просмотр технического описания (PDF) - JILIN SINO-MICROELECTRONICS CO., LTD.

Номер в каталоге

Компоненты Описание

производитель

TIP42C-O-C-N-B

PNP Epitaxial Silicon Transistor

JILIN SINO-MICROELECTRONICS CO., LTD. 

R

电特性 ELECTRICAL CHARACTERISTIC

TIP42C

项目

测试条件

最小值 典型值 最大值

单位

Parameter

Tests conditions

Value(min) Value(typ) Value(max) Unit

VCEO(sus) Ic=-30mA,IB=0

-100

-

V

ICES

VCE=-100V,VEB=0

-

-

-400

μA

ICEO

VCE=-60V,IB=0

-

-

-0.7

mA

IEBO

VEB=-5V,IC=0

-

-

-1

mA

hFE*

VCE=-4V,IC=-0.3A

VCE=-4V,IC=-3.0A

30

-

15

75

-

VCE(sat)*

IC=-6.0A,IB=-0.6A

-

-1.5

V

VBE(sat)*

IC=-6.0A,IB=-0.6A

-

-2.0

V

fT

VCE=-10V, Ic=-0.5A,f=1MHz

3.0

-

*Pulse Test: PW≤300ms, Duty Cycle≤2%

-

MHz

特征曲线 ELECTRICAL CHARACTERISTICS (curves)

hFE – IC

VCE(sat)- IC

Tc=100℃

Tc=25℃

Common emitter

VCE = -5 V Single

Common emitter

IC/IB = 10

Single pulse test

Tc=100℃

Tc=25℃

Collector corrent IC (A)

PC-TC

Collector corrent IC (A)

SOA

Single nonrepetitive pulse Tc = 25°C

Curves must be derated linear

with increase in temperature.

TC=25℃ DC Operation

Ambient temperature TC（℃）

版本：201403C

Collector-emitter voltage VCE (V)

2/4

Share Link: