D882SSG Просмотр технического описания (PDF) - Unisonic Technologies
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D882SSG Datasheet PDF : 4 Pages
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D882SS
TYPICAL CHARACTERISTICS
Static Characteristics
1.6
IB=9mA
IB=8mA
IB=7mA
1.2
IB=6mA
IB=5mA
0.8
IB=4mA
IB=3mA
0.4
IB=2mA
0
IB=1mA
0
4
8
12
16 20
Collector-Emitter Voltage (V)
Current Gain-Bandwidth Product
103
102
VCE=5V
IB=8mA
101
100
10-2
10-1
100
101
Collector Current, Ic (A)
DC Current Gain
103
102
VCE=2V
101
100
100
101
103
104
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Derating Curve of Safe Operating Areas
150
100
S/b limited
50
0
-50
0 50 100
150 200
Case Temperature, TC (°C)
Safe Operating Area
101
10mS 1mS
0.1mS
100 IC(max), DC
10-1
IC(max), Pulse
10-2
100
101
102
Collector-Emitter Voltage
Saturation Voltage
104
VBE(SAT)
103
102
VCE(SAT)
101
100
100
101
102
103
104
Collector Current, IC (mA)
3 of 4
QW-R206-018,D
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