D882 Просмотр технического описания (PDF) - Willas Electronic Corp.

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производитель

D882

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

SOT-89 Plastic-Encapsulate Transistors

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

FM120-M+

D882 THRU

FM1200-M

Typical CharSaOcDt-1e2r3i+stPiAcCsKAGE

Pb Free Produ

F2.00 eatures Static Characteristic

1000

• Batch

1.75better

process

reverse

lde1ea0smkiAaggn9me, Aecxu8cmrerAellnetnat

pCoOwMMeOr NdEi sMsITiTpEaRt i o n

nTda=2th5 e℃rmal resista

offer

nce.

s

• Low profile surface mounted7amApplication in order to

1.50

optimize board space.

6mA

•1.25Low power loss, high efficiency. 5mA

• High current capability, low forward voltage drop.

•1.00High surge capability.

4mA

100

Package o hFE u—t—lineIC

T =100℃

a

T =25℃

a

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

•0.75Guardring for overvoltage protection. 3mA

• Ultra high-speed switching.

•0.50Silicon epitaxial planar chip, metal silicon ju2mnAction.

0.071(1.8)

0.056(1.4)

• Lead-free parts meet environmental standards of

0.25

MIL-STD-19500 /228

I =1mA

B

0•.0R0 oHS product for packing code suffix "G"

10

H0alogen1 free p2 roduc3t for pa4 cking5code s6uffix "H7 " 8

1

COLLECTOR-EMITTER VOLTAGE V (V)

Mechanical data

CE

•1000Epoxy : UL94-V0 rVaCtEesadt fl—am—e reICtardant

2000

COMMON EMITTER

V = 2V

CE

10

100

1000

3000

COLLECTOR CURRENT I (mA)

C

VBEsat —— IC

0.040(1.0)

0.024(0.6)

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

1000

Method 2026

100

• Polarity : Indicated by cathode band

0.031(0.8) Typ.

0.031(0.8) Typ.

T =25℃

a

Dimensions in inches and (millimeters)

• Mounting Position : Any

T =100 ℃

• Weight : Approximaa ted 0.011 gram

T =100 ℃

a

10

MAXIMUMTa=R25A℃TINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.β=10

For capa1c1itive load, dera1t0e current by 21000%

1000

3000

100

1

β=10

10

100

1000

3000

CROALLTEICNTGORSCURREMT

I

C

(mA)

COLLECTOR CURREMT I (mA)

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM18C0-MH FM1100-MH FM1150-MH FM1200-M

Marking Code

Maximu3m000Recurrent

Peak

IC —— VBE

Reverse Voltage

Maximu1m000RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

12

VRRM

20

VRMS

14

VDC

20

IO

13

14

30500

40

21

28

30

40

1C5ob/Cib —1—6 VCB/V1EB8

50

60

80

35

42

56

50 C

60

80

ib

1.0

10

100

f=1MHz

IE=70/0IC=0

T =25 ℃

a100

115 120

150

200

105

140

150

200

100

Peak For1w00ard Surge Current 8.3 ms single half sine-wave IFSM

superimposed on rated load (JEDEC method)

Typical Thermal Resistance (Note 2)

RΘJA

30

C

ob

40

Typical Ju10nction Capacitance (Note 1)

Operating Temperature Range

CJ

TJ

-55 to +125

120

-55 to +150

Storage Temperature Range

COMMON ETMSITTTGER

- 65 to +175

V = 2V

CE

1

0

CHA3R00ACTERISTI6C00S

900

BASE-EMMITER VOLTAGE V (mV)

Maximum Forward Voltage at 1.0A DC

BE

10

SYMBOL12F0M0 120-MH

0.1

FM130-MH

FM140-MH

1

FM150R-EMVHERFSME16V0O-LMTHAGFEM1V80-M(VH)

10

20

FM1100-MH

FM1150-MH

FM1200-MH

VF

0.50

0.70

0.85

0.9

0.92

Maximum Average

Rated DC60B0 locking

Reverse

Voltage

CurrePnCt

at——@T

@T

AT=a 25℃

A=125℃

IR

0.5

10

NOTES: 500

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal40R0 esistance From Junction to Ambient

300

200

100

2012-0 06

0

25

50

75

100

125

150

AMBIENT TEMPERATURE T (℃)

a

2012-0

WILLAS ELECTRONIC COR

WILLAS ELECTRONIC CORP.

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