SS8050 Просмотр технического описания (PDF) - Jiangsu Yutai Electronics Co., Ltd

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производитель

SS8050

NPN Silicon Epitaxial Planar Transistors

Jiangsu Yutai Electronics Co., Ltd 

SS8 050

NPN Silicon Epitaxial Planar Transistors

FEATURES

Complimentary to SS8550

MARKING: Y1

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Power Dissipation

Junction Temperature

Storage Temperature Range

SOT-23 Plastic Package

Symbol

Value

Unit

VCBO

VCEO

VEBO

IC

Ptot

Tj

Tstg

40

25

5

1.5

300

150

- 55 to + 150

V

V

V

A

mW

OC

OC

Characteristics at Ta = 25 OC

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Symbol

Test conditions

V(BR)CBO IC= 100μA, IE=0

V(BR)CEO IC= 0.1mA, IB=0

V(BR)EBO IE=100μA, IC=0

ICBO

VCB=40V, IE=0

ICEO

VCB=20V, IE=0

IEBO

VEB= 5V, IC=0

hFE(1)

VCE=1V, IC= 100mA

hFE(2)

VCE=1V, IC= 800mA

VCE(sat)

IC=800mA, IB= 80mA

VBE(sat)

fT

IC=800mA, IB= 80mA

VCE=10V, IC= 50mA

f=30MHz

MIN

TYP

MAX UNIT

40

V

25

V

5

V

0.1

μA

0.1

μA

0.1

μA

200

350

40

0.5

V

1.2

V

100

MHz

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