S8050 Просмотр технического описания (PDF) - Shanghai Leiditech Electronic Technology Co., Ltd
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S8050 Datasheet PDF : 4 Pages
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S8050
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=40V,IE=0
0.1 μA
Collector cut-off current
ICEO
VCE=20V,IB=0
0.1 μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=1V,IC=50mA
VCE=1V,IC=500mA
120
50
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA
0.1 μA
350
0.6 V
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB= 50mA
1.2 V
Transition frequency
fT
VCE=6V, IC= 20mA
150
f=30MHz
MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
120-200
200-350
Rev :01.06.2018
2/4
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