BUX85F Просмотр технического описания (PDF) - SavantIC Semiconductor
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BUX85F Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX84F BUX85F
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BUX84F
400
VCEO(SUS)
Collector-emitter
sustaining voltage
IC=100mA ; IB=0;L=25mH
V
BUX85F
450
VCEsat-1 Collector-emitter saturation voltage IC=0.3A ;IB=0.03A
0.8
V
VCEsat-2 Collector-emitter saturation voltage IC=1A ;IB=0.2A
1
V
VBEsat
ICES
IEBO
Base-emitter saturation voltage
IC=1A ;IB=0.2A
Collector cut-off current
BUX84F
BUX85F
VCES=800V; VBE=0
Tj=125
VCES=1000V; VBE=0
Tj=125
Emitter cut-off current
VEB=5V; IC=0
1.1
V
0.2
1.5
mA
0.2
1.5
1.0
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
100
hFE-2
DC current gain
IC=0.5A ; VCE=5V
15
fT
Transition frequency
IC=0.2A ;VCE=10V;f=1.0MHz
20
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A ;VCC=250V
IB1=0.2A;IB2=-0.4A
0.2
0.5
µs
2
3.5
µs
0.4
µs
2
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