MMBT4401 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

MMBT4401

Silicon NPN transistor in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MMBT4401

Rev.F Apr.-2017

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

DATA SHEET

数值

Rating

60

40

6.0

600

350

150

-55～150

单位

Unit

V

V

V

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

Collector to Base Breakdown

Voltage

Emitter to Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation

Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Delay Time

Rise Time

Storage Time

Fall Time

符号

Symbol

VCEO

测试条件

Test Conditions

IC=1.0mA IB=0

最小值 典型值 最大值 单位

Min Typ Max Unit

40

V

VCBO IC=0.1mA IE=0

60

V

VEBO IE=0.1mA IC=0

ICBO

IEBO

hFE(1)

hFE(2)

hFE(3)

hFE(4)

hFE(5)

VCE(sat) (1)

VCE(sat) (2)

VBE(sat) (1)

VBE(sat) (2)

fT

td

tr

ts

tf

VCB=60V

VEB=6.0V

VCE=1.0V

VCE=2.0V

VCE=1.0V

VCE=1.0V

VCE=1.0V

IC=150mA

IC=500mA

IC=150mA

IC=500mA

VCE=10V

f=100MHz

VCC=30V

IB1=15mA

IE=0

IC=0

IC=150mA

IC=500mA

IC=10mA

IC=1.0mA

IC=0.1mA

IB=15mA

IB=50mA

IB=15mA

IB=50mA

IC=20mA

IC=150mA

VCC=30V IC=150mA

IB1=-IB2=15mA

6.0

V

50 nA

50 nA

100

300

40

80

40

20

0.4 V

0.75 V

0.75 0.95 V

1.2 V

250

MHz

15 ns

20 ns

225 ns

30 ns

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