SUR503EF Просмотр технического описания (PDF) - Kodenshi Auk Co., LTD

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Компоненты Описание

производитель

SUR503EF

Epitaxial planar NPN silicon transistor

Kodenshi Auk Co., LTD 

SUR503EF

Electrical Characteristics [Tr1, Tr2]

Characteristic

Symbol

Test Condition

(Ta=25°C)

Min. Typ. Max. Unit

Output cut-off current

IO(OFF) VO=50V, VI=0

-

-

500 nA

DC current gain

Output voltage

GI

VO=5V, IO=10mA

VO(ON) IO=10mA, II=0.5mA

80 200

-

-

-

0.1 0.3

V

Input voltage (ON)

VI(ON) VO=0.2V, IO=5mA

-

0.9 1.3

V

Input voltage (OFF)

Transition frequency

Input current

Input resistor (Input to base)

Input resistor (Base to common)

* : Characteristic of transistor only

VI(OFF) VO=5V, IO=0.1mA

fT*

VO=10V, IO=5mA, f=1MHz

II

VI=5V, IO=0

R1

-

R2

-

0.5 0.65

-

V

-

200

-

MHz

-

-

1.8 mA

3.3 4.7

6.1

KΩ

33

47

61

KΩ

KSD-R5U002-002

2

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