BTD2195J3 Просмотр технического описания (PDF) - Cystech Electonics Corp.

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BTD2195J3

NPN Epitaxial Planar Transistor

Cystech Electonics Corp. 

CYStech Electronics Corp.

Spec. No. : C654J3

Issued Date : 2004.03.18

Revised Date :2009.02.04

Page No. : 1/6

NPN Epitaxial Planar Transistor

BTD2195J3

Description

BVCEO

IC

RCESAT

120V

4A

600mΩ

The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low

speed switching application. RoHS compliant package process is adopted.

Equivalent Circuit

BTD2195J3

C

B

Outline

TO-252

E

B：Base

C：Collector

E：Emitter

BCE

Absolute Maximum Ratings (Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Junction Temperature

Storage Temperature

Note : Single Pulse Pw≦350μs, Duty≦2%.

Symbol

VCBO

VCEO

VEBO

IC

ICP

Pd(TA=25℃)

Pd(TC=25℃)

RθJA

RθJC

Tj

Tstg

Limits

130

120

5

4

6 (Note )

1.5

20

83.3

6.25

150

-55~+150

Unit

V

V

V

A

A

W

W

°C/W

°C/W

°C

°C

BTD2195J3

CYStek Product Specification

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